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CMOS Nanoelectronics
Innovative Devices, Architectures, and Applications
Résumé
This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.
Détails de l'édition
- ISBN-13
- 9789814364027
- ISBN-10
- 9814364029
- EAN
- 9789814364027
- Éditeur
- Pan Stanford publ. (Singapore)
- Date de publication
- 19 septembre 2012
- Langue
- en
- Pages
- 452
- Dimensions
- 24 cm
Provenance des données
- dimensions BnF Catalogue général · 23 juillet 2026
- language Google Books · 8 août 2026
- page_count Google Books · 8 août 2026
- publication_date Google Books · 8 août 2026
- subtitle Open Library · 24 juillet 2026
- summary Google Books · 8 août 2026
- title Open Library · 24 juillet 2026